Wafer for electrically characterizing tunnel junction film stacks with little or no processing

ABSTRACT

Probes are electrically connected to a surface of a tunnel junction film stack comprising a free layer, a tunnel barrier, and a pinned layer. Resistances are determined for a variety of probe spacings and for a number of magnetizations of one of the layers of the stack. The probe spacings are a distance from a length scale, which is related to the Resistance-Area (RA) product of the tunnel junction film stack. Spacings from as small as possible to about 40 times the length scale are used. Beneficially, the smallest spacing between probes used during a resistance measurement is under 100 microns. A measured in-plane MagnetoResistance (MR) curve is determined from the “high” and “low” resistances that occur at the two magnetizations of this layer. The RA product, resistances per square of the free and pinned layers, and perpendicular MR are determined through curve fitting.

PRIORITY INFORMATION

The instant application claims priority under 35 U.S.C. §121 as adivision of U.S. application Ser. No. 10/244,766, filed Sep. 16, 2002now U.S. Pat. No. 6,927,569, which is incorporated by reference herein.

STATEMENT OF GOVERNMENT RIGHTS

This invention was made with Government support under grant contractnumber MDA972-99-C-0009 awarded by the Defense Advanced ResearchProjects Agency (DARPA) of the United States Department of Defense. TheGovernment has certain rights in this invention.

FIELD OF THE INVENTION

This invention relates to tunnel junction devices and, morespecifically, the invention relates to electrically characterizingtunnel junction film stacks.

BACKGROUND OF THE INVENTION

Conventional techniques for characterizing tunnel junction film stacksrequire extensive processing of a semiconductor wafer in order tomeasure a few characteristics of the tunnel junction film stack. Thisprocessing is time consuming, complex, and can ruin devices created viaprocessing. Additionally, even if processing creates suitable devicesfor test, it is unclear whether measurements have been influenced by theprocessing. In other words, it is unclear as to whether the measurementsare a function of the tunnel junction film stack, the processing thatcreates additional structures needed to measure characteristics of thetunnel junction film stack, the additional structures, or somecombination of these.

Consequently, a need exists for characterizing tunnel junction filmswithout time consuming and expensive processing that is fraught withaccompanying flaws.

SUMMARY OF THE INVENTION

Aspects of the present invention overcome problems of the prior art byproviding techniques to characterize tunnel junction film stacks withminor or no processing. In one aspect of the invention, resistances aredetermined for a variety of probe spacings. Probes are electricallyconnected to a surface of a tunnel junction film stack. Generally, atunnel junction film stack comprises a free layer, a tunnel barrier, anda pinned layer, but many other configurations are possible. Theelectrical connection can be a physical connection directly to thesurface of the tunnel junction film stack or an electrical connection toa contact pad that is physically attached to the surface of the tunneljunction film stack. The probe spacings are generally selected to bewithin a predetermined distance from a length scale, which is related tothe Resistance-Area (RA) product of the tunnel junction film stack.While other spacings may be used, resistances, depending on probe orcontact pad configurations, tend to stabilize after probe or contact padspacing reaches a certain distance from the length scale. For instance,probe spacings greater than 40 times the length scale generally yieldvery similar resistances. The resistances are measured for bothmagnetizations of one of the layers of the stack, such that sets of“high” and “low” resistances are determined for both magnetizations ofthe free layer. Generally, the free layer is the layer able to havemultiple magnetizations. Additionally, an in-plane MagnetoResistance(MR) curve can be determined from the high and low resistances thatoccur at the two multiple magnetizations of the free layer.

In another aspect of the invention, the RA product, perpendicular MR,and resistances per square of the free layer, R_(F), and of the pinnedlayer, R_(P), are determined through a curve fitting technique. While anumber of curve fitting techniques may be used to determine thesequantities, a suitable technique is as follows. The in-plane MR isdetermined from the measured high and low resistances using a standardformula. The in-plane MR and one or both of the resistances aresimultaneously fit to theoretical values of in-plane MR and resistance.This is done by assuming values for the RA product, R_(F), R_(P), andperpendicular MR and then calculating in-plane MR and resistance curves.The values of the in-plane MR and resistance curves are then comparedwith the calculated values of in-plane MR and resistance curves. Thisprocess is then iterated, each time changing values for the RA product,R_(F), R_(P), and perpendicular MR, until the best agreement between themeasured and calculated values of in-plane MR and resistance isobtained.

In another aspect of the invention, an apparatus is provided forcharacterizing tunnel junction film stacks. The apparatus comprises amagnetic field generator used to generate a magnetic field, amicro-machined multi-point probe having four or more probes, where thesmallest spacing between any two of the multiple probes used during aresistance measurement has a spacing of 100 microns or less, and aresistance measuring module coupled to the multi-point probe and adaptedto measure resistance. The magnetic field is generated to place asemiconductor wafer having a tunnel junction film stack into one of aplurality of magnetizations for the tunnel junction film stack. Aresistance measurement by the resistance module at this magnetization atleast partially characterizes the tunnel junction film stack.Additionally, various probes and contact pad configurations aredescribed that are suitable for use with the apparatus. Advantageously,a multi-point probe is described that allows many different voltagemeasurements to be taken very quickly. When using the multi-point probe,the apparatus further comprises a multiplexer used to couple probes tothe resistance measuring module. Probe spacings are generally selectedto be within a predetermined distance from a length scale, which isrelated to the RA product of a tunnel junction film stack beingmeasured.

A more complete understanding of the present invention, as well asfurther features and advantages of the present invention, will beobtained by reference to the following detailed description anddrawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a side view of an unprocessed semiconductor wafer having atunnel junction film stack formed thereon;

FIGS. 1B and 1C are side views of the semiconductor wafer of FIG. 1A,after some amount of processing has been performed;

FIG. 2 is a graph of a hysteresis curve used to explain how many tunneljunction devices operate;

FIG. 3 is a side view of a four-point probe that is being used tomeasure characteristics of an unprocessed semiconductor wafer having atunnel junction stack formed thereon;

FIG. 4A is a side view of a processed semiconductor wafer having atunnel junction stack formed thereon and two contact pads, in accordancewith one embodiment of the present invention;

FIG. 4B is a top view of the processed semiconductor wafer of FIG. 4A;

FIG. 4C is a representation of a “toy model” used to explain aspects ofthe present invention, in accordance with one embodiment of the presentinvention;

FIGS. 5A and 5B are graphs of in-plane MagnetoResistance (MR) andresistance, respectively, for the toy model of FIG. 4C and exactsolutions for the configuration of FIGS. 4A and 4B;

FIGS. 6A and 6B are graphs of in-plane MR and resistance, respectively,for multiple Resistance-Area (RA) products of tunnel junction filmstacks using a four-point probe configuration, in accordance with oneembodiment of the present invention;

FIG. 7 is a method for characterizing tunnel junction films inaccordance with one embodiment of the present invention;

FIGS. 8A and 8B are graphs of measured resistance and MR, respectively,and curves fitting the measured data, for lithographically defined fourpoint contact pads of FIG. 12, in accordance with one embodiment of thepresent invention;

FIG. 9 is a block diagram of an apparatus for characterizing tunneljunction films in accordance with one embodiment of the presentinvention;

FIGS. 10A and 10B are micro-machined probes for use in the apparatus ofFIG. 9, in accordance with one embodiment of the present invention;

FIG. 11 is a diagram of an Atomic Force Microscope (AFM), a movableprobe, and a contact pad, in accordance with one embodiment of thepresent invention; and

FIGS. 12, 13, and 14 illustrate lithographically defined contact padssuitable for use with the present invention, in accordance withembodiments of the present invention.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

The present invention overcomes limitations of conventional techniquesbecause little or no processing of a semiconductor wafer having a tunneljunction film stack formed thereon is necessary to characterize thetunnel junction film stack. The present invention uses probes or contactpads in particular configurations to characterize tunnel junction filmstacks. Resistance is determined by using the probes, contact pads, orboth, and by using current and voltage through knownresistance-measuring techniques. The resistance is measured for aparticular magnetization of a free layer and certain spacing or spacingsbetween probes or contact pads. The free layer is magnetized with adifferent magnetization, and another resistance is determined. One ofthe previously determined resistances is a high resistance, and one is alow resistance. Using these two determined resistances, an in-planeMagnetoResistance (MR) may be determined. This process is repeated for anumber of probe or contact pad spacings. An in-plane MR curve and tworesistance curves, one for each of the high and low resistances, can bedetermined from the measured data. Using these curves, values aredetermined through curve fitting techniques for resistance per square ofthe free layer (R_(F)), resistance per square of the pinned layer(R_(P)), the Resistance-Area (RA) product of the stack, and theperpendicular MR.

For ease of reference, this disclosure is divided into three sections:(1) the INTRODUCTION section describes why commonly held beliefs aboutthe inability to characterize tunnel junction stacks by using probes orcontact pads are incorrect, and gives a simple description of aspects ofthe present invention; (2) the EXEMPLARY THEORY AND METHOD sectiondescribes a method suitable for characterizing tunnel junction stackswith probes or contact pads and describes theory that explains measuredresults; and (3) the EXEMPLARY APPARATUS section describes apparatussuitable for use with the present invention.

INTRODUCTION

A tunnel junction film stack is a series of films formed on top of eachother. A tunnel junction film stack is used to create a tunnel junctiondevice, to be described in more detail below. An unprocessedsemiconductor wafer 100 is shown in FIG. 1A. Unprocessed semiconductorwafer 100 comprises an unprocessed tunnel junction stack 110 formed on asubstrate 120. Unprocessed tunnel junction stack 110 comprises a freelayer 130, a tunnel barrier 140, and a pinned layer 150. The layerscomprising unprocessed stack 110 are often called “films,” and the stackitself is often called a “film stack.” Conventional characterizationtechniques for tunnel junction film stacks do not allow characterizationof the unprocessed tunnel junction film stack 110. Aspects of thepresent invention, as described below, do allow characterization ofunprocessed tunnel junction film stack 110. An unprocessed tunneljunction film stack 110 is primarily used to create a “tunnel junction,”after a generally extensive amount of processing.

A tunnel junction is a device where carriers, generally electrons, aremade to “tunnel” through a tunnel barrier. Diagrams of a simple tunneljunction device 106 are shown in FIGS. 1B and 1C. These figures show aprocessed semiconductor wafer 105 with a tunnel junction device 106formed thereon. Tunnel junction device 106 is formed by forming a tunneljunction stack 110 on a substrate 120 (as shown in FIG. 1A), andpatterning the unprocessed stack 110 to form the tunnel junction device106 and a processed stack 111. Tunnel junction device 106 comprises, asdescribed above, a free layer 130, a tunnel barrier 140, and a pinnedlayer 150. It should be noted that FIGS. 1B and 1C are used solely toillustrate certain terms and to provide an introduction to tunneljunction films. Actual tunnel junction devices used, for instance, in aMagnetic Random Access Memory (MRAM) device will be much more complexthan tunnel junction device 106.

The pinned layer 150 is named as such because its magnetization 170 ispinned such that it “points” in a certain direction, as shown in FIGS.1B and 1C. The free layer 130, conversely, is named as such because itsmagnetization 160 can be changed via a magnetic field that is a appliedfor a predetermined time. In FIG. 1B, the magnetization 160 of the freelayer 130 “points” to the right; in FIG. 1C, the magnetization 160“points” to the left. The “pointing” of the magnetizations 160, 170 is avisualization of the polarity of the magnetizations 160, 170. Themagnetization 160 of the free layer 130 will remain pointing in thedirection caused by the magnetic field, even after the field is removed.The magnetization 160 can be flipped in the other direction by applyinga magnetic field in the opposite direction.

FIG. 1C illustrates how tunnel junction device 106 is used in devicessuch as an MRAM. Current is forced through the free layer 130. Thetunnel barrier 140 impedes flow of the current, but some electrons willtunnel through the tunnel barrier 140. These electrons then pass throughthe pinned layer 150, where they are then extracted through conductivevias (not shown) that contact the pinned layer 150.

Because the current is known, the voltage between where the currententers and where it leaves provides an indication of the resistancebetween the entry and exit points. This resistance changes depending onmagnetizations 160, 170: the parallel magnetization, shown in FIG. 1B,and the anti-parallel magnetization, shown in FIG. 1C, yield differentresistances. Generally, the anti-parallel resistance is higher than theparallel resistance, but this depends on the materials used in the freelayer 130 and pinned layer 150. Thus, determining the voltage for aparticular current passing through the tunnel junction device 106provides an effective technique for determining the state ofmagnetizations 160, 170.

The resistance measured by current that passes perpendicular, asillustrated by reference 190, to the surface 135 of an unprocessed stack110 or processed stack 111 is quantified by a Resistance-Area (RA)product. The RA product changes when the magnetization 160 is changed.

FIG. 2 illustrates another quantity that researchers would like toquantify for tunnel junction stacks, which is the MagnetoResistance(MR). FIG. 2 shows a hysteresis curve having four distinct paths. Thehysteresis curve shown in FIG. 2 is used to illustrate how many tunneljunction devices operate. When the applied magnetic field has a negativevalue, the magnetization of the free layer 130 (see FIG. 1) will be afirst magnetization. This is illustrated by the path 210, where theresistance of the unprocessed stack 110 (see FIG. 1A) or processed stack111 (see FIGS. 1B and 1C) is indicated as a low resistance. As themagnetic field is increased, the resistance will stay low, travelingalong path 220. At some particular positive magnetic field, theresistance suddenly jumps to the high resistance. This occurs becausethe magnetization of the free layer 130 has become a secondmagnetization. As magnetic field is increased, path 230 will befollowed. As magnetic field is decreased, path 240 is followed, at thehigh resistance. As the magnetic field is further decreased until somenegative value, the resistance suddenly changes to the low resistanceagain, as the free layer 130 is magnetized back to the firstmagnetization. The MR is then related to the difference between the highand low values of resistance, as shown in the following formula:

${MR} = {100\% \times {\left( \frac{R_{H} - R_{L}}{R_{L}} \right).}}$This MR will be called a “perpendicular” MR herein in order todistinguish it from measured and calculated values of “in-plane” MR usedto define MR curves. It should be noted that, when the magnetic field isremoved, a tunnel junction device will be at one of two magnetizations,either magnetization 215 or 235.

Thus, there are multiple quantities that a researcher would like tocharacterize in order to determine the best materials, thicknesses, andprocessing procedures for the unprocessed stack 110, as shown in FIG.1A. However, current technology means that it is necessary to processthe unprocessed stack 110 to make a small, well defined tunnel junctiondevice with external leads connected to top and bottom films of theunprocessed stack 110. This processing involves extensive lithography,etching, dielectric deposition, and metal deposition, and therefore isexpensive and time consuming. Moreover, the processing often introducesflaws into the tunnel junction device, which, during testing, areimpossible to separate from flaws in the unprocessed stack 110.

Even when conventional techniques are used for creating tunnel junctiondevices suitable for measuring the RA product, the resistance per squareof the free layer and pinned layer, R_(F) and R_(P), respectively,cannot be determined. The resistance per square of a layer is theresistance a current experiences as it flows through the layer, parallelto upper and lower surfaces of the layer. The resistances R_(F) andR_(P) are quantities that it would be beneficial to measure but thatcannot be measured through conventional techniques used to measure theRA product.

Moreover, it was previously believed that MR and other quantities couldnot be measured by using probes or contact pads in electrical connectionwith the surface of a tunnel junction film of a tunnel junction filmstack (generally called a “stack” herein for simplicity). A tunneljunction film stack is any stack having one or more tunnel barrierssandwiched between two or more other films. In this disclosure, a“probe” is a device that is not affixed to the surface being measured,while a “contact pad” is affixed to the surface being measured. A probecan be affixed to an intermediate metal structure, such as a contactpad. Electric coupling of the probe to the tunnel junction film stackcan occur through physical contact between the probe and the surface ofthe tunnel junction film stack, through a probe that is affixed to anintermediate metal structure, or through other techniques known to thoseskilled in the art.

FIG. 3 shows an example of one potential technique some researchers haveused to attempt to measure MR and resistance of tunnel junction films. Aportion 305 of a semiconductor wafer is shown. Portion 305 comprises asubstrate 120 and an unprocessed stack 110 having a number of tunneljunction films. The tunnel junction films, as in FIGS. 1A and 1B,comprise the free layer 130, tunnel barrier 140, and pinned layer 150. Afour-point probe 310 is used to attempt to determine MR and resistance,for instance. The four-point probe 300 comprising probes 310, 320, 330,and 340, each separated by a distance, a, so that the entire distancefrom start to end of the four-point probe 300 is L. Typical conventionalfour-point probes have an L of 1.5 to 3 millimeters (mm). Each probe 310through 340 contacts top surface 135 of free layer 130. Probe 310 isused to inject current, and probe 340 is used to collect the currentafter it passes through the unprocessed stack 110. Probes 320 and 330are used to measure voltage.

The four-point probe 300 is a well known tool used to characterize manydifferent types of semiconductors and other materials. In fact, it isused to characterize Giant MagnetoResistive (GMR) films, which are usedin read and write heads of many current hard drives. In GMR, the tunnelbarrier 140 is replaced by a metal, which allows current to flow to thepinned layer 150.

However, for tunnel junction devices, conventional thought was that thecurrent could not pass through the tunnel barrier 140. The current, itwas assumed, passed through path 350 and never into the pinned layer150. Consequently, the RA product of the tunnel junction barrier 140could not be determined, as the current never passes through pinnedlayer 150. Because of this, the MR cannot be determined, as current mustflow through tunnel junction barrier 140 in order to determine MR.Moreover, when a four-point probe 300 was used to attempt to measure MR,the measured MR would be very low, as shown below. Ironically this wasbecause the current flowed through both the free and pinned layers (andso did pass through the barrier) but the contribution of the barrier tothe resistance was negligibley small. Therefore, any researcher usingcommonly available probes (such as four-point probe 300) to attempt tocharacterize tunnel junction films would determine no suitable data.Additionally, while resistance can be measured with a four-point probe300, it was previously believed that the measured resistance was notuseful.

What the researchers did not realize, and what is part of the presentinvention, is that the optimum probe spacing is related to the RAproduct and the resistance per square of the free and pinned layers(R_(F) and R_(P), respectively) of the unprocessed stack 110. Asdeveloped more fully below, spacing between probes must be near a lengthscale, defined herein as follows:

${\lambda = \left( \frac{RA}{R_{F} + R_{p}} \right)^{\frac{1}{2}}},$where λ is the length scale, RA is the RA product of the unprocessedstack 110 or processed stack 111, R_(F) is the resistance/square of thefree layer 130, and R_(P) is the resistance/square of the pinned layer150. For instance, for a tunnel junction stack having an RA product of1,000 Ohm-square microns and assuming that the R_(F) and R_(P)resistances per square of each about 10 Ohms, the length scale shownabove indicates that probe spacing should be within some distance of 7microns. Conventional probes are much, much larger than this probespacing, typically 100 times larger. Additionally, to determine theperpendicular MR, RA product, and R_(F) and R_(P), it is important thatmultiple resistance measurements be made, using different probespacings, for both high and low resistances caused by the magnetizationof the free layer 130. These multiple measurements allow in-plane MR andresistance to be determined at multiple probe spacings. Theperpendicular MR that is to be measured, the RA product, the R_(F), andthe R_(P) can all be determined by using curve fitting techniques.Moreover, the present invention allows these measurements to be takenwith little or no processing of the stack. In this disclosure, asemiconductor wafer having a tunnel junction film stack formed thereonis considered to be unprocessed. Using the present invention, theproblems associated with creating an actual tunnel junction devicebefore being able to characterize the tunnel junction film stack aredramatically reduced or completely eliminated.

The theory behind aspects of the present invention is described below.Before describing theory, it is beneficial to describe a rudimentarymodel that comes close to theory and to show some figures thatillustrate why conventional probes do not measure suitable quantitiesfor tunnel junction film stacks.

Referring now to FIG. 4A, a side view of a semiconductor wafer 305 isshown. A processed stack 111 and substrate 120 structure are shown.However, two lithographically defined contact pads 410 and 420, formedon the surface 135 of free layer 130, are shown. Current is injectedinto contact pad 410 and collected at contact pad 420. Voltage ismeasured across contact pads 410 and 420. As shown in FIG. 4A, currentflows through paths 430 and 440. In FIG. 4B, a top view of the contactpads 410 and 420 is shown. Each is made of a metal, such as aluminum,deposited on the surface 135 of free layer 420 through techniques knownto those skilled in the art. The contact pads 410, 420 are separated bya distance, L, and each has a width, W, and length, X. It is assumedthat W>>L>>X.

FIG. 4C shows a “toy model” of a resistor network. The toy model 490 isa simple, approximate, illustration of the resistances encountered bythe current as it travels through paths 430, 440. As current travelsthrough path 430, it experiences a resistance equal to approximately(L/W)R_(F). As current travels through path 430, it experiences multipleresistances. As the current in path 440 travels from contact pad 410through the processed stack 111, it experiences a resistance ofapproximately 2RA/LW, because the RA product is a measure of “vertical”resistance of the processed stack 111 and the current passes through anarea of approximately WL/2. As the current in path 440 travels throughthe pinned layer 150, it experiences a resistance of about (L/W)R_(P).As the current travels back up through processed stack 111 to contactpad 420, it again experiences a resistance of 2RA/LW.

While a predetermined current is forced through the contact pads 410,420, voltage is measured. The measured voltage allows a measuredresistance to be determined for the particular contact spacing, L. Thisstep measures one of R_(H) or R_(L), depending on the magnetization ofthe free layer 130. A magnetic field is applied to cause themagnetization of the free layer 130 to point in a different direction,then current is again forced through the contact pads 410, 420, and theresultant voltage is measured. Because R_(H) and R_(L) are known, anin-plane MR may be determined. This process is repeated for manydifferent contact spacings, L. Measured resistances and in-plane MR maybe plotted, as shown in FIGS. 5A and 5B.

FIG. 5A shows a plot of in-plane MR versus contact pad spacing, L, forboth the toy model 490 and an exact solution (described in more detailbelow) for this contact pad configuration. FIG. 5B shows a plot ofmeasured resistances, both R_(H) and R_(L), versus contact pad spacing,L, for both the toy model 490 and the exact solution. What FIGS. 5A and5B show is that the toy model 490 is a relatively close approximation totheory. Additionally, both the toy model and the exact solution showthat it is possible to characterize a tunnel junction stack by usingcontact pads, but that the contact pads must be within a predetermineddistance in order to be able to extract suitable quantities from thedata. In particular, as FIG. 5A shows, the perpendicular MR (20percent), R_(F) (200 Ohm), R_(P) (50 Ohm), and RA product (400Ohm-micron²) can all be extracted by using the in-plane MR and measuredresistances curves. Suggested methods for extracting these quantitiesare given below.

FIGS. 6A and 6B show the same plots as 5A and 5B, respectively, only theplotted curves are for four-point probes having evenly spaced probes.The space between each probe is illustrated as one-third of the totalwidth of the probes, L (see FIG. 10B for an example of such a four-pointprobe). As can be seen, the shape of the curves is related to the RAproduct of the tunnel junction stack. Tunnel junction stacks with smallRA values require very small probe spacings in order to determinerelevant data. Even relatively large RA products, such as the RA productof 4000 Ohm-micron² require probe spacings on the order of 50 microns orless, or no in-plane MR and very little resistance change will bemeasured. The length scale for the RA products of 40, 400, and 4000Ohm-micron² are 0.37, 1.15, and 3.65 microns, respectively.

It should be noted that the curves in FIG. 6 show the measuredresistance, R. To calculate the resistance per square, Rsq, thefollowing may be used:R _(sq) =R×π/ln(2), orR _(sq) =R×4.53.R_(f) and Rp are examples of Rsq.

Based on FIGS. 6A and 6B, it is recommended that the spacings used varyfrom the smallest spacing possible out to around 10λ. Spacings greaterthan 10λ may also be used, but values of in-plane MR and high and lowresistances are stable after 10λ. It is also recommended that anestimate be made of the RA product of a stack prior to measurement, inorder to ensure an appropriate range of spacings be selected formeasurements. As shown in FIGS. 6A and 6B, the in-plane MR andresistance curves change depending on the RA product. The smallestpossible spacing is chosen so that the limiting value of resistance atL=0 can be measured accurately. Importantly, the resistance at a zerospacing is R_(F) for four-point probe configurations. Consequently, itis beneficial to get as close as possible to zero spacing. The largestspacing of 10λ is chosen so that the resistances will be stable at 10λ.For instance, for the RA products of 40, 400, and 4000 Ohm-micron², then10λ is 3.7, 11.5, and 36.5 microns, respectively. Thus, 10λ providesstable values of resistances and also provides a margin for error incase the actual RA product is greater than the estimated RA product. Theresistance curves will asymptotically approach the value of R_(F)∥R_(P),and a probe spacing of 10λ should yield a value very close to the valueof R_(F)∥R_(P).

Thus, FIGS. 5A, 5B, 6A, and 6B show that, while it is possible tocharacterize tunnel junction film stacks by using probes or contactpads, choice of probe or contact pad spacing or spacings is critical. Asstated previously, the conventional wisdom was that one could notcharacterize tunnel junction stacks using probes or contact pads, andthis convention wisdom was borne out by measurements with widely spacedprobes that showed no or very little measured in-plane MR.

Nonetheless, these figures also show that characterization of tunneljunction stacks may be made easily and with little or no processing, aslong as the choice of probe or contact pad spacing or spacings iscorrectly chosen.

Exemplary Theory and Method

The graphs in FIGS. 5A, 5B, 6A, and 6B are determined from theory. Thistheory explains how current flows through the stack, and the equationsfrom the theory depend on configurations of the probes and contact pads.Common probe and contact pad configurations are described below.

Theory for Cylindrical Symmetry

Consider the case of cylindrical symmetry (for example, assume a singlepoint source of current at the origin). The equations are as follows:∫{right arrow over (J)}·{right arrow over (dA)}=I ₀δ₀.  (1)∫{right arrow over (E)}·{right arrow over (dl)}=∫ρ{right arrow over(J)}·{right arrow over (dl)}=0.  (2)

Equation (1) gives

${{J_{z} + {\frac{\partial J_{F}}{\partial r}t_{F}} + {\frac{J_{F}}{r}t_{F}}} = 0},$and2πr(J _(F) t _(F) +J _(P) t _(P))=I ₀.

Equation (2) gives

${J_{F\;\rho\; F} - J_{p\;\rho\; p} + {\frac{\partial J_{z}}{\partial r}{RA}}} = 0.$

Combining these three equations gives the following differentialequation:

${{f^{''} + {\frac{1}{z}f^{\prime}} - {\left( {1 + \frac{1}{z^{2}}} \right)f} + \frac{\delta}{z}} = 0},$wheref≡E_(F)=ρ_(F)J_(F),z≡r/λ,

${\delta \equiv {\frac{R_{F}R_{p}}{R_{F} + R_{p}}\frac{I_{0}}{2{\pi\lambda}}}},{{{and}\mspace{14mu}\lambda} \equiv {\left( \frac{RA}{R_{F} + R_{P}} \right)^{1\text{/}2}.}}$Luckily, an exact solution to this differential equation may bedetermined for different probe and contact pad configurations. A generalsolution is as follows:

${f = {{{AK}_{1}(z)} + {{BI}_{1}(z)} + \frac{\delta}{z}}},$where K₁ is a modified Bessel function of the second kind of order one,and I₁ is a modified Bessel function of the first kind of order one.Using this general solution and appropriate boundary conditions, theelectric field can be solved for any situation involving cylindricalsymmetry. The electric field is then integrated to calculate the voltagedrop between any two points. The principle of superposition is used tosuperimpose more than one current source. For the specific case of onepoint current source at the origin, the boundary conditions are:

${{{zf} - {z^{2}f^{\prime}}} = {{\frac{I_{0}R_{f}}{\pi\lambda}\mspace{14mu}{as}\mspace{14mu} z}->0}},{{{and}\mspace{14mu} f} = {{0\mspace{14mu}{as}\mspace{14mu} z}->{\infty.}}}$

For the case of four equally spaced probes in a line, the solution is asfollows:

${R = {\frac{V}{I} = {\frac{R_{F}{R_{p}}}{\pi}\left\{ {{\frac{R_{F}}{R_{P}}\left\lbrack {{K_{0}\left( \frac{L}{3\lambda} \right)} - {K_{0}\left( \frac{2L}{3\lambda} \right)}} \right\rbrack} + {\ln(2)}} \right\}}}},$where L is the distance between the first and last probes,

${{\left. R_{F}||R_{p} \right. = \frac{R_{F}R_{p}}{R_{F} + R_{p}}},}\;$and K₀ is a modified Bessel function of the second kind of order zero.

Consider the case of four probes in a straight line in the order of I⁺,V⁺, V⁻, and I⁻, where spacings between the probes are as follows: a,which corresponds to the spacing between I⁺ and V⁺; b, which correspondsto the spacing between V⁺ and V⁻; and c, which corresponds to thespacing between V⁻ and I⁻. For this situation, the solution is asfollows:

$R = {\frac{\left. R_{F}||R_{p} \right.}{2\pi}{\left\{ {{\frac{R_{F}}{R_{p}}\left\lbrack {{K_{0}\left( \frac{a}{\lambda} \right)} + {K_{0}\left( \frac{c}{\lambda} \right)} - {K_{0}\left( \frac{a + b}{\lambda} \right)} - {K_{0}\left( \frac{b + c}{\lambda} \right)}} \right\rbrack} + {\ln\left\lbrack \frac{\left( {a + b} \right)\left( {c + b} \right)}{ac} \right\rbrack}} \right\}.}}$

Consider the case of four probes placed arbitrarily on the surface of awafer (not necessarily in a straight line), where spacings between theprobes are as follows: a, which corresponds to the spacing between I⁺and V⁺; b, which corresponds to the spacing between I⁺ and V⁻; c, whichcorresponds to the spacing between V⁺ and I⁻; and; d, which correspondsto the spacing between V⁻ and I⁻. For this situation, the solution is asfollows:

$R = {\frac{\left. R_{F}||R_{p} \right.}{2\pi}{\left\{ {{\frac{R_{F}}{R_{p}}\left\lbrack {{K_{0}\left( \frac{a}{\lambda} \right)} + {K_{0}\left( \frac{d}{\lambda} \right)} - {K_{0}\left( \frac{c}{\lambda} \right)}} \right\rbrack} + {\ln\left\lbrack \frac{bc}{ad} \right\rbrack}} \right\}.}}$

Linear Symmetry

As a second example, consider the case of linear symmetry (for example,FIGS. 4A and 4B). Using Equations (1) and (2) now results in thefollowing differential equation:f″−f+δ=0.With definitions:

${\delta \equiv {\frac{R_{F}R_{p}}{R_{F} + R_{p}}\frac{I_{0}}{W}}},{{{and}\mspace{14mu} z} \equiv {x\text{/}\lambda}},$the general solution is now the following:f=Ae ^(z) +Be ^(−z)+δ.

For the specific case shown in FIGS. 4A and 4B the solution is thefollowing:

$\left. {R \equiv R_{F}}||{R_{p}{{\frac{L}{W}\left\lbrack {1 + {4\left( \frac{\lambda}{L} \right)\left( \frac{R_{F}}{R_{p}} \right)\left( \frac{\sinh^{2}\left( {L\text{/}2\lambda} \right)}{\sinh\left( {L\text{/}\lambda} \right)} \right)}} \right\rbrack}.}} \right.$Note that this assumes the limits of X→0 and W→∞. In other words, thepads have no length and are infinitely wide (i.e., W>>L>>X).

Now that the theory has been explained for a variety of probe andcontact pad configurations, it will now be shown how to use this theoryin order to characterize tunnel junction film stacks.

Referring now to FIG. 7, a method 700 is shown for characterizing tunneljunction film stacks. Method 700 assumes that processing, if any isnecessary, has been performed. For instance, if a number of two-pointcontact pads are going to be used to determine quantities associatedwith the tunnel junction film stacks, then the processing necessary tocreate the contact pads should be performed prior to starting method700. Such processing is well known to those skilled in the art and isdescribed in more detail below with respect to various contact pads.Additionally, other steps such as annealing should be performed ifnecessary. Note that the term “probe” as used herein encompasses anyelectrical connections between a contact pad and a current supply or avoltage measuring device.

Method 700 begins in step 710, when a number of resistances are measuredfor the high and low resistances. The high and low resistances arecaused by first and second magnetizations of the free layer (or otherlayer able to change magnetizations) of the stack. These resistances aremeasured for a variety of probe or contact pad spacings. As explainedabove, it is beneficial to measure resistance by using spacings from thesmallest possible spacing to about 40λ. The “spacing” that is importantdepends on the probe or contact pad configuration being used. Forinstance, for a four-point probe the spacing that is important is theaverage of the three distances between the four probes in the four-pointprobe. Regardless of the probe or contact pad configuration used, anumber of probe spacings should be used in order to determine enoughresistance data to adequately characterize the tunnel junction filmstack.

There are a number of techniques for performing step 710. For instance,when using four-point probes, a selected four-point probe, having aselected spacing between probes, is placed in electrical contact with asurface of the stack (e.g., the surface of the free layer), then currentis passed through two of the probes while the voltage is measured atanother two of the probes. It should be noted that voltage could beapplied to the stack and current measured. A magnetic field, suitable toswitch magnetization of the free layer, is applied to the stack. Thenthe current is again passed through two of the probes while voltage ismeasured at another two of the probes. Another four-point probe, withdifferent probe spacing, is selected and measurements are taken at bothmagnetizations of the free layer. This process is repeated until allspacings have been tested.

In one embodiment of the present invention, a multi-point probe is used.In a particular embodiment, the multi-point probe is a 12-point probe,although probes having higher or lower number of points are also useful.This 12-point probe is a micro-machined probe and there are a variety ofspacings between the probes. Moreover, current and voltage can be routedto any four probes of the 12-point probe. Using the twelve-point probe,a large array of resistance data can be quickly determined. With thismulti-probe, it is more efficient to determine resistance data for avariety of probe spacings, then apply a magnetic field to switchmagnetization of the free layer, and again determine resistance data fora variety of probe spacings.

In step 710, measured in-plane MR is determined for each set of high andlow resistances for each spacing. For instance, if a probe has a spacingof 10 microns between each of the probes in a four-point probe, aresultant high and low resistance can be determined for this 10 micronspacing. From the high and low resistances, a corresponding in-plane MRis determined for this 10 micron spacing.

In step 730, curve fitting is performed. The RA product, R_(F), R_(P),and perpendicular MR are determined by using one set of determinedresistances from either the high or low resistance data and by using acurve fitting technique. In other words, a mathematical equation hasalready been determined for the particular configuration of probes orcontact pads. Fitting is performed by assuming values for the RAproduct, R_(F), R_(P), and perpendicular MR and then calculatingin-plane MR and resistance curves. The values of the in-plane MR andresistance curves are then compared with the calculated values ofin-plane MR and resistance curves. This process is then iterated, eachtime changing values for the RA product, R_(F), R_(P), and perpendicularMR, until the best agreement between the measured and calculated valuesof in-plane MR and resistance is obtained.

Thus, method 700 allows perpendicular MR, the RA product, R_(F), andR_(P) to be determined with little or no processing, in contrast toconventional techniques, which required lengthy processing.

It should be noted that the “curves” described above should be broadlyconstrued. For instance, a 12-point probe is described below that allowsvarious spacings to be used during measurements. Because the spaces arenot evenly chosen, all of the resultant in-plane MR and resistance datacannot be shown on a graph having two axis. Nonetheless, curve fittingtechniques and theoretically derived equations are available to fit theequations with the data.

Advantageously, steps 710 and 720 of method 700 shown in FIG. 7 may alsobe used to measure the hysteresis curve shown in FIG. 2. For instance,resistance could be measured as a function of applied magnetic fieldusing a four point probe on the surface of an unpatterned tunneljunction film stack, where the smallest spacing between any two of theprobes used during the measurements is less than 100 microns. The entirehysteresis curve of FIG. 2 could easily be measured using the apparatusand methods disclosed herein. It is beneficial to use spacing that isclose to the length scale for the tunnel junction film stack.

Turning now to FIGS. 8A and 8B, two curves are shown for a variety ofprobe spacings for a number of lithographically defined four-pointcontact pads (see FIG. 12). In FIG. 8A, a low resistance curve is shown.The dots indicate determined resistances, which were determined by usingmeasured voltages and predetermined currents at a variety of probespacings. The curve is the best fit by using the curve fittingtechniques described in step 720 of the method 700 of FIG. 7. For thisgeometry, the highest resistance point on the curve is equivalent to theresistance per square of the free layer, R_(F). The lowest resistancepoint on the curve is the parallel combination of the resistances persquare of the free and pinned layers, or R_(F)∥R_(P).

FIG. 8B shows MR for a variety of probe spacings. The dots indicated MRsdetermined by using the high and low determined resistances at the probespacings. The curve is the best fit determined through the techniques ofmethod 750 of FIG. 7. It should be noted that the RA product is quitelarge in this example, being about 72,000 Ohm-micron².

Exemplary Apparatus

Referring now to FIG. 9, an exemplary apparatus 990 is shown that issuitable for characterizing tunnel junction film stacks in accordancewith the present invention. Apparatus 990 comprises a tunnel junctiontest device 900 and a computer system 970, which interact throughoptional probe data connection 961 and control connection 981. Tunneljunction test device 900 is beneficially a scanning conductivitymicroscope and is made by Capres of Denmark. Tunnel junction test device900 is shown testing a semiconductor wafer 920 with a tunnel junctionfilm stack formed thereon. Beneficially, no processing of thesemiconductor wafer 920 is performed, so no contact pads 923 will bepresent on semiconductor wafer 920. However, some embodiments of thepresent invention use optional contact pads 923 formed on the stack ofthe semiconductor wafer 920. Thus, FIG. 9 shows optional contact pads923. It should be noted that the semiconductor wafer 920 and contactpads 923 are not part of the tunnel junction test device 900.

The tunnel junction test device 900 comprises a magnetic field generator910, multi-point probe 915, multiplexer 930, resistance module 958,control module 955, and data storage module 960. Resistance module 958comprises a current module 940 and a voltage module 950. Current module940 measures current, such that the current module 940 produces ordetermines or both a current to within a particular accuracy. Voltagemodule 950 measures voltage, such that the voltage module 950 producesor determines or both a voltage to within a particular accuracy.Similarly, The connections 926-1 through 926-N (collectively,“connections” 926) connect the multi-point probe 915 and the multiplexer930. Current module 940 is coupled to multiplexer 930 through currentlines 941 and 942. The voltage module 950 is similarly coupled to themultiplexer 930 through voltage lines 951 and 952. Connection 953 is anoptional connection used to communicate the measured resistance to datastorage 960, if used.

Computer system 970 comprises memory 973 having an analysis module 980,a processor 975, and a media interface 977. Computer system 970 is showninteracting with a Digital Versatile Disk (DVD) 978 through mediainterface 977. Analysis module 980 performs the method 700 of FIG. 7 todetermine perpendicular MR, the RA product, and the resistances persquare of R_(F) and R_(P). Resistance data may be extracted from datastorage 960 through probe data connection 961 in certain configurationsof apparatus 990. Analysis module 980 can also be used, through controlconnection 981, to modify control module 955 in order to select currentsused by current module 940 or voltages used by voltage module 950, andto determine how current connections 941, 942 and voltage connections951, 951 are routed through multiplexer 930, if used. Additionally,control module 955 may be set to turn on and off magnetic fieldgenerator 910 and to, optionally, select an appropriate magnetic fieldfor magnetic field generator 910. Optionally, programming can beperformed directly through the tunnel junction test device 900 throughcontrol module 955. Additionally, computer system 970 may be entirelycontained in tunnel junction test device 900, if desired.

Advantageously, the smallest spacing between any two of the multipleprobes on multi-point probe 915 used during a resistance measurement hasa spacing of 100 microns or less. In other words, multi-point probe 915comprises four or more probes. Two of the probes used during aresistance measurement will have the smallest spacing of the four probesbeing used during a resistance measurement. In order to characterize alarge number of tunnel junction film stacks of different materials, thissmallest spacing is beneficially 100 microns or less.

As is known in the art, the methods and apparatus discussed herein maybe distributed as an article of manufacture that itself comprises acomputer-readable medium having computer-readable code means embodiedthereon. The computer-readable program code means is operable, inconjunction with a computer system such as computer system 970, to carryout all or some of the steps to perform the methods or create theapparatuses discussed herein. The computer-readable medium may be arecordable medium (e.g., floppy disks, hard drives, compact disks, DVD978, or memory cards) or may be a transmission medium (e.g., a networkcomprising fiber-optics, the world-wide web, cables, or a wirelesschannel using time-division multiple access, code-division multipleaccess, or other radio-frequency channel). Any medium known or developedthat can store information suitable for use with a computer system maybe used. The computer-readable code means is any mechanism for allowinga computer to read instructions and data, such as magnetic variations ona magnetic medium or height variations on the surface of an opticaldisk, such as DVD 978.

Memory 973 configures the processor 975 to implement the methods, steps,and functions disclosed herein. The memory 973 could be distributed orlocal and the processor 975 could be distributed or singular. The memory973 could be implemented as an electrical, magnetic or optical memory,or any combination of these or other types of storage devices. Moreover,the term “memory” should be construed broadly enough to encompass anyinformation able to be read from or written to an address in theaddressable space accessed by processor 973. With this definition,information on a network (not shown) is still within memory 973 becausethe processor 975 can retrieve the information from the network. Itshould be noted that each distributed processor that makes up processor973 generally contains its own addressable memory space. It should alsobe noted that some or all of computer system 970 can be incorporatedinto an application-specific or general-use integrated circuit.

It should be noted that a tunnel junction test device 900 will generallycomprise additional devices that are not shown. For example, because theprobes and contact pads are usually very small, some type ofmagnification is beneficial. This magnification may be provided by aCharge-Coupled Device (CCD). Additionally, a mounting system isgenerally used to mount the multi-point probe 915 and semiconductorwafer 920 and to move each relative to the other (or to keep thesemiconductor wafer 920 fixed and move the multi-point probe 915, forinstance). Specifically, a mechanism for positioning probes can use alaser beam that reflects off the bottom of the semiconductor wafer 920.It is also beneficial to be able to measure multiple locations on thesemiconductor wafer 920, in order to determine uniformity of the stackand its associated layers.

Various configurations of apparatus 990 will now be described inreference to different probes and contact pads. FIGS. 10 and 11 aredirected to exemplary probes, and FIGS. 12 through 14 are directed tocontact pads. Reference should be made, when appropriate, to FIG. 9.

FIG. 10A shows a micro-machined 12-point probe having twelve connections1011 through 1022, of which connections 1011 and 1022 are shown, andtwelve individual probes 1001 through 1012, of which probes 1001, 1003,and 1012 are labeled. The probes 1001 through 1012 have known spacings.Each probe 1001 through 1012 is connected to one of the connections 1011through 1022, which are then coupled to connections 926-1 through 926-N.Control module 955 is set to select current for current module 940 andits connections 941, 942 and to cause the multiplexer 930 to route theseconnections to two of the probes 1001 through 1012. Additionally,control module 955 directs multiplexer 930 to connect connections 951,952 from voltage module 950 to another two of the probes 1001 through1012. Furthermore, it is also possible that voltage module 950 is usedto create a voltage and current module 940 is used to measure aresulting current. In the example of FIG. 10A, probes 1011, 1008, 1006,and 1004 are selected by multiplexer 930, so that probe 1011 is coupledto connection 941, probe 1008 is coupled to connection 951, probe 1006is coupled to connection 952, and probe 1004 is coupled to connection942. The spacings between these probes are spacings 1030, 1040, and1050, respectively. Thus, the equation given above for a four-pointprobe having unequal spacings between the probes is used.

The largest and smallest spacings between selected probes are chosen tobe within a predetermined amount from the expected length scale, λ,based on the expected RA product, R_(F) and R_(P). The spacing which isused to determine the predetermined amount is an average of the threespacings between the four selected probes. Because the micro-machinedprobe 1000 is formed through known semiconductor micro-machiningtechniques, generally the smallest possible spacing that can be madewill be used in order to come as close as possible to determining R_(F).Currently, spacings suitable to measure an RA product of 200 Ohm-micron²have been created, which is a spacing as small as 1.5 microns, dependingon R_(F) and R_(P). Advantageously, the smallest spacing between two ofthe plurality of probes used during a resistant measurement is a spacingof approximately 100 microns or less, as this provides suitable spacingsto measure tunnel junction stack films with a wide variety of RAproducts, and resistances per square. In the example of FIG. 10A, thesmallest spacing for probes being used for a single resistancemeasurement is illustrated by reference numeral 1040.

Probes 1001 through 1012 are placed in physical contact with the surface925 of semiconductor wafer 920 (in this example, contact pads 923 arenot used), which also provides an electrical connection between theprobes 1001 through 1012 and the stack on the semiconductor wafer 920.The magnetization of the stack is set in a first magnetization by usingthe magnetic field generator 910. Control module 955 selects appropriateprobes 1001 through 1012 in order to route current and voltage throughfour probes of the 12-point probe 1000, and control module 955 controlsresistant module 958 so that an appropriate resistance is measured. Thisprocess is repeated for a predetermined number of combinations of probes1001 through 1012. Resultant resistance data is stored in data storage960. Then magnetic field generator 910 is turned on by the controlmodule 955, and the process of selecting four of the probes 1001 through1012 of 12-point probe 1000 is repeated. The resultant resistance data953 is stored in data storage 960. The analysis module 980 thenretrieves the probe data 961 and analyzes the data to create theperpendicular MR, the RA product, and the resistances R_(F) and R_(P).

Using the micro-machined 12-point probe 1000 in tunnel junction testdevice 900 provides very fast voltage determination times with norequired stack processing.

Referring now to FIG. 10B, another micro-machined probe is shown. Inthis micro-machined four-point probe 1055, there are four connections1071 through 1074 and four evenly spaced (spaced by a) probes 1061through 1064, of which probes 1061 and 1064 are labeled. In thisconfiguration, multiplexer 930 is not required but may be used. Assumethat connection 1071 is coupled to probe 1061, connection 1072 iscoupled to probe 1062, connection 1073 is coupled to probe 1063,connection 1074 is coupled to probe 1064. Then, connections 1071 through1074 are generally directly connected to appropriate voltage and currentconnections in the following manner: connection 1074 is coupled tocurrent connection 941; connection 1073 is coupled to voltage connection1951; connection 1072 is coupled to voltage connection 952, andconnection 1071 is coupled to current connection 942.

The four-point probe 1055 is used similarly to the 12-point probe 1000.The four-point probe 1055 is placed in contact with the surface 925 ofsemiconductor wafer 920. Current is passed through probes 1061 and 1064and voltage is measured by using probes 1062 and 1063. Alternatively,voltage is placed on probes 1062 and 1063 and current is measured fromprobes 1061 and 1064. The magnetic field generator 910 is turned on,which switches the magnetization of the free layer in the stack. Ameasurement of resistance is then performed. Because the four-pointprobe 1055 is designed for one spacing, multiple four-point probes 1055with multiple spacings need to be used to provide meaningful data inorder for analysis module 980 to characterize tunnel junctionquantities. The spacings are provided from as small as possible to apredetermined distance from λ. The space a is used to determine thepredetermined distance. Generally, each four-point probe is manuallyplaced in contact with the semiconductor wafer 920. It is beneficialthat the smallest spacing between two of the plurality of probes usedduring a resistant measurement is a spacing of approximately 100 micronsor less.

Referring now to FIG. 11, another configuration using multi-point probe915 is shown. This configuration uses an Atomic Force Microscope (AFM),which is a well known device. In this configuration, one probe is amovable probe 1110, which is placed in contact with surface 925 ofsemiconductor wafer 920. Another of the probes is contact 1130 and itsassociated wire 1135. Contact 1130 is formed through known techniques.As such, there is some required processing of the semiconductor wafer920, but the amount of processing is small. Current is injected bymovable probe 1110, and removed at contact 1130. Another probe is theAtomic Force Microscope (AFM) tip 1120, which is used to measurevoltage. The AFM tip 1120 is passed along path 1140, ending as close aspossible to movable probe 1110.

The equations for the configuration of FIG. 11 can be derivedstraightforwardly from the cylindrical symmetry case described above.

Turning now to FIG. 12, one exemplary set of lithographically definedcontact pads 1230 are shown. Stack 1210 is formed on semiconductor wafer1200. The stack 1210 is formed over the entire semiconductor wafer 1210,in this example. Processing is performed to form an insulating layer1220 over the stack 1210. Insulating layer 1220 could be SiO₂ orhard-baked photoresist. For instance, photoresist could be deposited andpatterned, then hard baked to form insulating layer 1220. Over theinsulating layer 1220 is formed a set of metal pads 1235-1 through1235-4 (collectively, “pads 1235”), corresponding runs 1240-1 through1240-4 (collectively, “runs 1240”), and corresponding tips 1245-1through 1245-4 (collectively, “tips 1245”). The tips 1245 are formed tooverlap the stack 1210 and are formed to be in physical and electricalcontact with the stack 1210. Conventional techniques are used to formthe four-point contact pads 1230. For instance, another layer ofphotoresist is formed and patterned to create the four-point contactpads 1230. Then metal is deposited and the photoresist is removedthrough wet etch.

Generally, a conventional four-point probe is used to physically contactthe pads 1235 of four-point contact pads 1230. Generally, themultiplexer 930 will not be used and, instead a four-point probe isconnected to the pads 1235. Current is passed through pads 1235-1 and1235-4 and voltage is measured across pads 1235-2 and 1235-4. Multipledifferent four-point contact pads 1230 will be formed during processing,each with different spacing L. Data from each of these contact pads 1230will be used to characterize the stack 1210. FIGS. 8A and 8B werecreated from four-point contact pads formed in this manner.

Similarly, the other configurations shown in FIGS. 13 and 14 will bemade with multiple spacings and data therefrom will be used tocharacterize the stack 1210. In the configurations shown in FIGS. 12through 14, four- or two-point probes may be used to contact the contactpads. Alternatively, other devices may be used to contact the contactpads. For instance, contacts could be formed on the contact pads andwires connected to the contacts. Such contacts and wires are definedherein as probes.

Referring now to FIG. 13, two two-point contact pads 1310 and 1340 areshown. Two-point contact pad 1310 comprises inner circular pad 1335 andouter annulus pad 1320. The spacing, L, is between the outercircumference 1335 of contact pad 1310 and inner surface 1325 of annuluspad 1325. The appropriate equation for this configuration is easilyderivable from the “cylindrical theory” equation presented above. Thetwo-point contact pad 1340 comprises two pads 1350 and 1360, separatedby spacing, L, and having width, W. Theoretical resistance and in-planeMR curves for the two-point contact pad 1340 have been described abovein reference to FIGS. 5A and 5B.

Referring now to FIG. 14, a final contact pad configuration is shown. Inthis configuration, a center circular pad 1401 is surrounded by a numberof annuluses 1402 through 1406. Locations 1410, 1420, 1430, and 1440 areexamples of where probes would be placed. The distances between theannuluses are the spacings used to determine how far from the lengthscale, λ, the spacings are. This configuration may help with specificcases involving low RA product tunnel junction film stacks. Theequations for this configuration are derivable from the “cylindricaltheory” presented above.

It should be noted that the stack shown in the preceding figures may bemuch more complex than that described. In particular, many such stackshave free and pinned layers are themselves made of many layers.Additionally, the free and pinned layers may be reversed, such that thefree layer is on top of the substrate and the pinned layer then is usedto perform characterization measurements. There are also materialshaving more than two magnetizations, and tunnel junction film stackswhere the electrodes (i.e., the layers above and below the tunneljunction barrier) are nonmagnetic and the tunnel junction barrier ismagnetic. Moreover, there are tunnel junction film stacks havingmultiple tunnel junction barriers, free layers, and pinned layers. Thepresent invention can be used with any tunnel junction stack films.

It is to be understood that the embodiments and variations shown anddescribed herein are merely illustrative of the principles of thisinvention and that various modifications may be implemented by thoseskilled in the art without departing from the scope and spirit of theinvention.

1. A semiconductor wafer used to characterize a tunnel junction filmstacks, comprising: a tunnel junction film stack formed on a substrate,wherein the tunnel junction film stack comprises a free layer, a tunnelbarrier and a pinned layer and wherein the layers of the formed tunneljunction film stack are not etched; and a plurality of sets formed on asurface of the tunnel junction film stack, each of the sets having aplurality of pads, each of the sets having a spacing between pads. 2.The semiconductor wafer of claim 1, wherein each of the sets comprisecircular contact pad surrounded by a plurality of annuluses.
 3. Thesemiconductor wafer of claim 2, wherein a smallest spacing between twoof the annuluses on each of the sets is less than 100 microns.